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| Output Characteristics 60 0.050 On-Resistance VS Drain Current -ID, Drain-To-Source Current(A) VGS = 10V 50 VGS = 7V 40 RDS(ON)ON-Resistance(OHM) VGS = 5V 0.045 0.040 0.035 0.025 VGS = 10V 0.020 0.015 0.010 VGS = 4.5V VGS = 4.5V 30 20 10 VGS = 3V 0 0.5 1 1.5 2 2.5 0.005 0 10 20 30 40 -ID , Drain-To-Source Current 50 -VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source 0.05 On-Resistance VS Drain Current RDS(ON) x 1.8 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) RDS(ON) x 1.6 RDS(ON) x 1.4 RDS(ON) x 1.2 RDS(ON) x 1.0 RDS(ON) x 0.8 0.04 0.03 0.02 0.01 ID = -10A 0 2 4 6 8 10 0 RDS(ON) x 0.6 - 50 VGS = 10V ID= -10A - 25 0 25 50 75 100 125 150 -VGS, Gate-To-Source Voltage(V) TJ , Junction Temperature(UC) Transfer Characteristics 50 Gate charge Characteristics 10 -VGS , Gate-To-Source Voltage(V) -ID, Drain-To-Source Current(A) ID = -10A VDS = -15V 8 6 40 30 Tj=125C 20 Tj=25C 10 Tj=-20C 4 2 0 0 4.5 9 13.5 18 22.5 27 Qg , Total Gate Charge 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS, Gate-To-Source Voltage(V) Capacitance Characteristic 2000 1750 1 .0 E + 0 2 1 .0 E + 0 1 Body Diode Forward Voltage C , Capacitance(pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS, Drain-To-Source Voltage(V) -IS , Source Current(A) 1500 TJ =150 C 1 .0 E + 0 0 1 . 0 E -0 1 TJ =25 C 1 . 0 E -0 2 1 . 0 E -0 3 1 . 0 E -0 4 1 .0 E -0 5 0 .0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 -VSD, Source-To-Drain Voltage(V) Safe Operating Area 100 Single Pulse Maximum Power Dissipation 1400 1m s 1200 1000 SINGLE PULSE R.JA= 40 C/W TA=25 C 10 -ID , Drain Current(A) 10m s . 1 Operation in This Area is Lim ited by RDS(ON) 100m s Power(W) 100 800 600 400 1S 10s NOTE : 1.VGS= 10V 2.TA=25 C 3.R.JA =40 C/W 4.Single Pulse 0.1 DC 200 0 0.0001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Mormalized Effective T1 , Square Wave Pulse Duration[sec] |
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